2N1711 NPN General Purpose Transistor
Series 2N
2N1711 overview
The 2N1711 is an NPN General Purpose Transistor made by Philips Electronics - NXP. Main ratings: Maximum Collector-Base Voltage |Vcb| 75 V; Maximum Collector-Emitter Voltage |Vce| 50 V; Maximum Emitter-Base Voltage |Veb| 7 V; Transition Frequency 70 MHz. The absolute maximum ratings table on this page lists the 4 limits from the manufacturer's datasheet that must not be exceeded. This page brings together the 2N1711 pinout, key specifications and maximum ratings, with the full datasheet PDF to preview below or download.
Key specifications
Maximum Collector-Base Voltage |Vcb|
75 V
Maximum Collector-Emitter Voltage |Vce|
50 V
Maximum Emitter-Base Voltage |Veb|
7 V
Transition Frequency (ft)
70 MHz
Datasheet
2n1711.pdf
2N1711 features
- High current (max. 500 mA)
- Low voltage (max. 50 V).
2N1711 pinout
| Pin | Name |
|---|---|
| 1 | Emitter |
| 2 | Base |
| 3 | Collector |
Absolute maximum ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 75 | V |
| Icollector current (DC) | 500 | mA | |
| Ipeak base current | 200 | mA | |
| case Tstorage temperature | -65 to +150 | °C |
2N1711 applications
- DC and wideband amplifiers.
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