2N5550 NPN General Purpose Transistor
Series 2N
2N5550 overview
The 2N5550 is an NPN General Purpose Transistor made by Fairchild Semiconductor. Main ratings: Maximum Collector-Base Voltage |Vcb| 160 V; Maximum Collector-Emitter Voltage |Vce| 140 V; Maximum Emitter-Base Voltage |Veb| 6 V; Maximum Collector Current |Ic max| 0.6 A. The absolute maximum ratings table on this page lists the 7 limits from the manufacturer's datasheet that must not be exceeded. This page brings together the 2N5550 pinout, key specifications and maximum ratings, with the full datasheet PDF to preview below or download.
Key specifications
Maximum Collector-Base Voltage |Vcb|
160 V
Maximum Collector-Emitter Voltage |Vce|
140 V
Maximum Emitter-Base Voltage |Veb|
6 V
Maximum Collector Current |Ic max|
0.6 A
Transition Frequency (ft)
100 MHz
Datasheet
2n5550.pdf
2N5550 features
- Low current (max. 300 mA)
- High voltage (max. 160 V).
2N5550 pinout
| Pin | Name |
|---|---|
| 1 | Emitter |
| 2 | Base |
| 3 | Collector |
Absolute maximum ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 160 | V |
| Collector-Emitter Voltage | VCEO | 140 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current | IC | 600 | mA |
| Collector Dissipation | PC | 625 | mW |
| Junction Temperature | TJ | 150 | °C |
| Storage Temperature | TSTG | -55 ~ 150 | °C |
2N5550 applications
- Switching and amplification in high voltage applications such as telephony.
Comments 0
Leave a comment