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2N5551 NPN General Purpose Transistor

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Series 2N
2N5551 NPN General Purpose Transistor Datasheet

2N5551 overview

The 2N5551 is an NPN General Purpose Transistor. Main ratings: Maximum Collector-Base Voltage |Vcb| 180 V; Maximum Collector-Emitter Voltage |Vce| 160 V; Maximum Emitter-Base Voltage |Veb| 6 V; Maximum Collector Current |Ic max| 0.6 A. This page brings together the 2N5551 pinout and key specifications, with the full datasheet PDF to preview below or download.

2N5551 NPN General Purpose Transistor

Key specifications

Maximum Collector-Base Voltage |Vcb|
180 V
Maximum Collector-Emitter Voltage |Vce|
160 V
Maximum Emitter-Base Voltage |Veb|
6 V
Maximum Collector Current |Ic max|
0.6 A
Transition Frequency (ft)
100 MHz

Datasheet

2n5551s.pdf
Format PDFSize 150 KBLanguage EN
Third-party / unverified source

2N5551 features

  • Low current (max. 300 mA)
  • High voltage (max. 160 V)

2N5551 pinout

2N5551 pinout diagram
PinName
1Emitter
2Base
3Collector

2N5551 applications

  • Switching and amplification in high voltage applications such as telephony

2N5551 datasheet PDF preview

PDF · 150 KB

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