EN29F040-90PI Datasheet – 4 Megabit Flash Memory IC
4 Megabit (512K x 8-bit) Flash Memory
EN29F040-90PI overview
The EN29F040-90PI is a 4 Megabit (512K x 8-bit) Flash Memory, supplied in these packages: DIP, PLCC, TSOP 32 Pin Type. The absolute maximum ratings table on this page lists the 3 limits from the manufacturer's datasheet that must not be exceeded. This page brings together the EN29F040-90PI pinout and maximum ratings, with the full datasheet PDF to preview below or download.
The EN29F040 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 512K words with 8 bits per word, the 4M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte can be programmed typically in 10µs. The EN29F040 features 5.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29F040 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable ( WE ) controls, which eliminate bus contention issues. This device is designed to allow either single (or multiple) Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.
Datasheet
EN29F040-90PI features
- 5.0V operation for read/write/erase operations
- Fast Read Access Time 45ns, 55ns, 70ns, and 90ns
- 45ns, 55ns, 70ns, and 90ns
- Sector Architecture
- 8 uniform sectors of 64Kbytes each
- Supports full chip erase
- Individual sector erase supported
- Sector protection
- Hardware locking of sectors to prevent program or erase operations within individual sectors
- High performance program/erase speed
- Byte program time: 10µs typical
- Sector erase time: 500ms typical
- Chip erase time: 3.5s typical
- Low Standby Current 1µA CMOS standby current-typical 1mA TTL standby current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
- Low Power Active Current 30mA active read current 30mA program/erase current
- 30mA active read current
- 30mA program/erase current
- JEDEC Standard program and erase commands
- JEDEC standard DATA polling and toggle bits feature
- Single Sector and Chip Erase
- Sector Unprotect Mode
- Embedded Erase and Program Algorithms
- Erase Suspend / Resume modes
- Read and program another Sector during Erase Suspend Mode
- 0.35 µm double-metal double-poly triple-well CMOS Flash Technology
- Low Vcc write inhibit < 3.2V
- 100K endurance cycle
- Package Options 32-pin PDIP 32-pin PLCC 32-pin TSOP (Type 1)
- 32-pin PDIP
- 32-pin PLCC
- 32-pin TSOP (Type 1)
- Commercial and Industrial Temperature Ranges
EN29F040-90PI pinout
| Name | Description |
|---|---|
| A0-A18 | Addresses |
| DQ0-DQ7 | Data Inputs/Outputs |
| CE | Chip Enable |
| OE | Output Enable |
| WE | Write Enable |
| Vcc | Supply Voltage (5V ± 10% ) |
| Vss | Ground |
Absolute maximum ratings
| Parameter | Value |
|---|---|
| Storage Temperature Plastic Packages | 65°C to +125°C |
| Ambient Temperature with Power Applied. | 55°C to +125°C |
| Output Short Circuit Current (Note 3) | 200 mA |
EN29F040-90PI applications
- Parallel Flash Memory
- Microcontroller Systems
- Embedded Systems
- Firmware Development
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